界面电荷
The conduction band offset and the interface charge density are derived from the apparent carrier concentration distribution obtained by the C-V profiling techniqe.
采用C-V法测量Si/GaP(Ⅲ)异质结的表观载流子浓度分布n(x),从中导出了异质界面的导带失配值和界面电荷密度。
We investigate two kinds of low-dimensional semiconductor systems by full-band kp method, one-dimensional resonant tunneling diode ( RTD) and zero-dimensional quantum dot ( QD). We mainly study the dependence of tunneling properties on the interface charge in the GaN RTD.
本论文使用全带kp计算方法研究了这两种低维半导体系统:一维共振隧穿和零维量子点结构体系。
英语网 · 双语娱乐资讯
英语网 · 英语词汇
英语网 · 四六级英语
英语网 · 少儿英语故事